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Carrier density saturation in a Ga0.25In0.75As/InP heterostructure

Identifieur interne : 006B81 ( Main/Repository ); précédent : 006B80; suivant : 006B82

Carrier density saturation in a Ga0.25In0.75As/InP heterostructure

Auteurs : RBID : Pascal:08-0316584

Descripteurs français

Pascal (Inist)
- Densité porteur charge, Autocohérence, Théorie bandes, Valence, Phénomène transport, Structure bande, Phosphure d'indium, Hétérostructure, Puits quantique, InP, GaInAs, 8107S.
Wicri :
- geographic : Valence (Drôme).

English descriptors

KwdEn :
- Band structure, Band theory, Carrier density, Heterostructures, Indium phosphide, Quantum wells, Self consistency, Transport processes, Valence.

Abstract

We observe a strong saturation of the carrier density in the quantum well of a Ga_0.25In_0.75As/InP MISFET at positive gate voltages. Using a self-consistent Schrodinger/Poisson solver, we model the band structure and find that the saturation is caused by the population of charge states between the gate and the quantum well. We discuss the impact of these charge states on the transport properties, and present a fabrication method that avoids parallel conduction in this heterostructure.

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Pascal:08-0316584

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Carrier density saturation in a Ga<sub>0.25</sub>
In<sub>0.75</sub>
As/InP heterostructure</title>
<author><name sortKey="Martin, T P" uniqKey="Martin T">T. P. Martin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Physics, University of New South Wales</s1>
<s2>Sydney NSW2052</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Australie</country>
<wicri:noRegion>Sydney NSW2052</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, University of Oregon</s1>
<s2>Eugene, OR 97403</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Eugene, OR 97403</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Marlow, C A" uniqKey="Marlow C">C. A. Marlow</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, University of Oregon</s1>
<s2>Eugene, OR 97403</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Eugene, OR 97403</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Samuelson, L" uniqKey="Samuelson L">L. Samuelson</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Division of Solid State Physics, Lund University, Box 118</s1>
<s2>221 00 Lund</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Suède</country>
<wicri:noRegion>221 00 Lund</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Linke, H" uniqKey="Linke H">H. Linke</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, University of Oregon</s1>
<s2>Eugene, OR 97403</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Eugene, OR 97403</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Taylor, R P" uniqKey="Taylor R">R. P. Taylor</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, University of Oregon</s1>
<s2>Eugene, OR 97403</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Eugene, OR 97403</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Physics and Astronomy, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Nouvelle-Zélande</country>
<wicri:noRegion>Christchurch</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">08-0316584</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0316584 INIST</idno>
<idno type="RBID">Pascal:08-0316584</idno>
<idno type="wicri:Area/Main/Corpus">006824</idno>
<idno type="wicri:Area/Main/Repository">006B81</idno>
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<seriesStmt><idno type="ISSN">1386-9477</idno>
<title level="j" type="abbreviated">Physica ( E) low-dimens.  syst.  nanostrut.</title>
<title level="j" type="main">Physica. E, low-dimentional systems and nanostructures</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band structure</term>
<term>Band theory</term>
<term>Carrier density</term>
<term>Heterostructures</term>
<term>Indium phosphide</term>
<term>Quantum wells</term>
<term>Self consistency</term>
<term>Transport processes</term>
<term>Valence</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Densité porteur charge</term>
<term>Autocohérence</term>
<term>Théorie bandes</term>
<term>Valence</term>
<term>Phénomène transport</term>
<term>Structure bande</term>
<term>Phosphure d'indium</term>
<term>Hétérostructure</term>
<term>Puits quantique</term>
<term>InP</term>
<term>GaInAs</term>
<term>8107S</term>
</keywords>
<keywords scheme="Wicri" type="geographic" xml:lang="fr"><term>Valence (Drôme)</term>
</keywords>
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</teiHeader>
<front><div type="abstract" xml:lang="en">We observe a strong saturation of the carrier density in the quantum well of a Ga<sub>0.25</sub>
In<sub>0.75</sub>
As/InP MISFET at positive gate voltages. Using a self-consistent Schrodinger/Poisson solver, we model the band structure and find that the saturation is caused by the population of charge states between the gate and the quantum well. We discuss the impact of these charge states on the transport properties, and present a fabrication method that avoids parallel conduction in this heterostructure.</div>
</front>
</TEI>
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<fA06><s2>5</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Carrier density saturation in a Ga<sub>0.25</sub>
In<sub>0.75</sub>
As/InP heterostructure</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 17th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-17)</s1>
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<fA12 i1="01" i2="1"><s1>GOLDONI (G.)</s1>
<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>SORBA (L.)</s1>
<s9>ed.</s9>
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<fA14 i1="01"><s1>School of Physics, University of New South Wales</s1>
<s2>Sydney NSW2052</s2>
<s3>AUS</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Physics, University of Oregon</s1>
<s2>Eugene, OR 97403</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Division of Solid State Physics, Lund University, Box 118</s1>
<s2>221 00 Lund</s2>
<s3>SWE</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Department of Physics and Astronomy, University of Canterbury</s1>
<s2>Christchurch</s2>
<s3>NZL</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Dipartimento di Fisica & INFM-S3, Università di Modena e Reggio Emilia, Via Campi 213/A</s1>
<s2>41100 Modena</s2>
<s3>ITA</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>NEST CNR-INFM and Scuola Normale Superiore, Complesso polvani, Via Della Faggiola, 17/19</s1>
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<s3>ITA</s3>
<sZ>2 aut.</sZ>
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<fA20><s1>1754-1756</s1>
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<fA21><s1>2008</s1>
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<s2>145E</s2>
<s5>354000173645982570</s5>
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<fA44><s0>0000</s0>
<s1>© 2008 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>13 ref.</s0>
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<fA47 i1="01" i2="1"><s0>08-0316584</s0>
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<fC01 i1="01" l="ENG"><s0>We observe a strong saturation of the carrier density in the quantum well of a Ga<sub>0.25</sub>
In<sub>0.75</sub>
As/InP MISFET at positive gate voltages. Using a self-consistent Schrodinger/Poisson solver, we model the band structure and find that the saturation is caused by the population of charge states between the gate and the quantum well. We discuss the impact of these charge states on the transport properties, and present a fabrication method that avoids parallel conduction in this heterostructure.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Densité porteur charge</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>02</s5>
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<s5>03</s5>
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<fC03 i1="02" i2="X" l="ENG"><s0>Self consistency</s0>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<fC03 i1="04" i2="3" l="ENG"><s0>Valence</s0>
<s5>05</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Phénomène transport</s0>
<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>15</s5>
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<s5>15</s5>
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<s5>15</s5>
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<fC03 i1="08" i2="3" l="FRE"><s0>Hétérostructure</s0>
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<fC03 i1="08" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>16</s5>
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<s4>INC</s4>
<s5>52</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>GaInAs</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>8107S</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fN21><s1>196</s1>
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<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-17)</s1>
<s2>17</s2>
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<s4>2007-07-15</s4>
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Carrier density saturation in a Ga0.25In0.75As/InP heterostructure

Carrier density saturation in a Ga0.25In0.75As/InP heterostructure

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri